著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Naoki Kobayashi and Toshio Nishida and Kazuhide Kumakura and Toshiki Makimoto,p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors,MRS Proceedings,0272-9172,Springer Science and Business Media LLC,2000-01-01,639,,,https://cir.nii.ac.jp/crid/1874242817845969664,https://doi.org/10.1557/proc-639-g13.10