著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
K. Kawano and Akira Yoshida and Y. Seki and T. Nishida and Akihiro Wakahara and Osamu Oda,Growth and orientation of GaN epilayers on NdGaO/sub 3/ by hydride vapor phase epitaxy,Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159),,IEEE,2002-11-27,,,33-36,https://cir.nii.ac.jp/crid/1874242817944059520,https://doi.org/10.1109/sim.1998.785071