アクティブマトリクス型液晶ディスプレイのための高性能多結晶Si薄膜トランジスタに関する研究 / 三村秋男

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Bibliographic Information

Title
アクティブマトリクス型液晶ディスプレイのための高性能多結晶Si薄膜トランジスタに関する研究 / 三村秋男
Other Title
  • Study of high performance poly-silicon thin film transistors for active-matrix liquid-crystal displays
Author
三村, 秋男
University
東京工業大学
Types of degree
博士(工学)
Grant ID
B3467
Degree year
2000-09-30

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Description

identifier:oai:t2r2.star.titech.ac.jp:50348680

博士論文

資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
博士論文

Table of Contents

論文目録

CONTENTS

Preface

Abriviation

Chapter 1:Introduction

1.1 Outline of applications of poly-Si films and TFTs to electronic devices

1.2 State of the art and technical trends of AM-LCDs

1.3 TFT technologies in AM-LCDs

1.4 Demands for poly-Si TFTs

1.5 Purposes and outline of this thesis

1.6 References

Chapter 2:Low-Temperature Poly-Si TFTs by Solid Phase Crystallization

2.1 Introduction

2.2 High-performance poly-Si TFTs by solid-phase crystallization

2.3 Transparent storage capacitor structure for AM-LCDs

2.4 Poly-Si TFTs with two-layer gate oxide with photo-CVD and APCVD

2.5 Poly-Si TFTs with SiO₂ gate insulator thermally oxidized at 600℃

2.6 Conclusions

2.7 References

Chapter 3:Middle-Temperature Poly-Si TFTs by Two-Step Solid-Phase Crystallization

3.1 Introduction

3.2 Expansion and contraction of thick poly-Si films at high temperature

3.3 Improvement of high-temperature poly-Si TFT characteristics

3.4 Middle-temperature poly-Si TFTs

3.5 Conclusions

3.6 References

Chapter 4:SOI TFTs by Zone-Melting Recrystallization

4.1 Introduction

4.2 Fabrication and evaluation of SOI films

4.3 Characteristics of SOI TFTs

4.4 Application of p-channel SOI TFTs to TFT-LCDs

4.5 SOI TFTs with directly contacted ITO

4.6 Conclusions

4.7 References

Chapter 5:Large-Area Low-Temperature Poly-Si TFTs by Laser Crystallization

5.1 Introduction

5.2 Large-area laser crystallization for LPCVD a-Si films

5.3 Conclusions

5.4 References

Chapter 6:Large-Area High-Speed Ion Doping Technologies

6.1 Introduction

6.2 Ion doping with 150-mm diameter ion source

6.3 Large-area ion doping with 100mm×400mm ion source

6.4 Doping mechanism in doping and laser activation

6.5 Low-energy doping and laser activation mechanism

6.6 Conclusions

6.7 References

Chapter 7:High-Performance Low-Temperature CMOS Poly-Si TFTs for AM-LCD

7.1 Introduction

7.2 TFT fabrication Process

7.3 Improvement of uniformity of laser crystallization

7.4 Reduction of TFT leakage current

7.5 PECVD of SiO₂ using TEOS

7.6 Fabrication of CMOS TFTs

7.7 Conclusions

7.8 References

Chapter 8:Evolutionary TFT-Process Technologies

8.1 Introduction

8.2 One-mask CMOS doping

8.3 Fabrication of flat and large poly-Si grains

8.4 Continuous process of laser crystallization and gate SiO₂ deposition

8.5 Location control of flat and large grains

8.6 Conclusions

8.7 References

Chapter 9:Conclusions

Acknowledgements

List of Publications

Appendix

A1 Application of Thick Poly-Si film for Dielectric Isolation

A2 SIPOS Passivation

A3 Preliminary study of SPC technology

A4 Large Area LPCVD of Si

A5 ITO Dry Etching Technologies

A6 Repair Technology

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