- Preparation and Characterization of Zn1-xBixO Films
We have studied structural and optical properties of Bi-doped ZnO films with various Bi concentrations from 0.00 at% to 19.07 at%. The Zn1-xBixO films with thickness of 2 micrometers are prepared on both silicon crystal and quartz glass substrates at temperature of 465 K by using co-sputtering of ZnO and Bi targets. The films obtained are characterized using SEM observation, X-ray diffraction, EPMA, infrared absorption and UV-visible light absorption measurements. The results showed that Bi atom is substituted for Zn atom in the ZnO crystal in the film when Bi concentration is below 5.38 at%. In the Bi concentration range from 5.38at% to 7.80at%, the ZnO becomes to be an amorphous phase and a crystalline Bi2O3 phase appears in the films. In Bi concentrations above 7.80at%, the Zn1-xBixO films are composed by an amorphous network of ZnO and BiO.
- Jasco Report
Jasco Report 54 (1), 1-6, 2012-05-10