High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa

Bibliographic Information

Title
High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa
Author
H.Shimizu et al.

Journal

Related Projects

See more

Details

  • CRID
    1010000781804562953
  • Article Type
    journal article
  • Data Source
    • KAKEN

Report a problem

Back to top