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High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa
Bibliographic Information
- Title
- High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa
- Author
- H.Shimizu et al.
Journal
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- Phys.Rev.B 71 (No.9)
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Phys.Rev.B 71 (No.9) 2005
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Details 詳細情報について
-
- CRID
- 1010000781804562953
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN