InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
Bibliographic Information
- Title
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- Author
- K.Takeuchi et al.
Journal
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- Japanese Journal of Applied Physics 43
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Japanese Journal of Applied Physics 43 2004
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Details 詳細情報について
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- CRID
- 1010000781805406083
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- Article Type
- journal article
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- Data Source
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- KAKEN