Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation
書誌事項
- タイトル
- Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation
- 著者
- Tomoyuki Suwa
収録刊行物
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- Japanese Journal of Applied Physics 46
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Japanese Journal of Applied Physics 46 2148-2152, 2007
