Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy
Bibliographic Information
- Title
- Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy
- Author
- T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
Journal
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- physica status solidi (印刷中)
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physica status solidi (印刷中)
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Details
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- CRID
- 1010000782095222044
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- Article Type
- journal article
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- Data Source
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- KAKEN