Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

DOI PDF 参考文献72件
  • Maria-Andromachi Syskaki
    Singulus Technologies AG 1 , 63796 Kahl am Main, Germany
  • Takaaki Dohi
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany
  • Beatrice Bednarz
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany
  • Sergei Olegovich Filnov
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany
  • Sergey Alexeyevich Kasatikov
    Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 4 , Hahn-Meitner Platz 1, 14109 Berlin, Germany
  • Mona Bhukta
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany
  • Alevtina Smekhova
    Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 4 , Hahn-Meitner Platz 1, 14109 Berlin, Germany
  • Rohit Pachat
    Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay 5 , 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
  • Johannes Wilhelmus van der Jagt
    Spin-Ion Technologies, C2N 6 , 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
  • Shimpei Ono
    Central Research Institute of Electric Power Industry 8 , Yokosuka, Kanagawa 240-0196, Japan
  • Dafiné Ravelosona
    Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay 5 , 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
  • Jürgen Langer
    Singulus Technologies AG 1 , 63796 Kahl am Main, Germany
  • Mathias Kläui
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany
  • Liza Herrera Diez
    Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay 5 , 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
  • Gerhard Jakob
    Institut für Physik, Johannes Gutenberg-Universität Mainz 2 , Staudingerweg 7, 55128 Mainz, Germany

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<jats:p>The electric-field control of magnetism is a highly promising and potentially effective approach for realizing energy-efficient applications. Recent interest has focused on the magneto-ionic effect in synthetic antiferromagnets, driven by its potential to enable high-density data storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling remains elusive. In our work, we find that the modulation of the interlayer exchange coupling is highly sensitive to the thickness of the ferromagnetic layer. We have identified that the changes in the interlayer exchange coupling induced by the gate voltage can be associated with the magneto-ionic effects on the top ferromagnetic layer of the synthetic antiferromagnet. The direct contact between the high ion mobility oxide and the top ferromagnetic layer plays a crucial role in facilitating these effects, largely modifying the anisotropy of the layers. Our findings highlight the important role of magneto-ionic control over the properties of the top ferromagnetic layer in governing the observed modifications in the interlayer exchange coupling. This study provides crucial insight into the intricate interplay between stack structure and magneto-ionic effect on magnetic properties in synthetic antiferromagnetic thin film systems.</jats:p>

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