High pressure Raman study on Ba doped silicon clathrate Ba_<24>Si_<100> up to 27 GPa

Bibliographic Information

Title: High pressure Raman study on Ba doped silicon clathrate Ba_<24>Si_<100> up to 27 GPa

Author: H.Shimizu, T.Kume et al.

Journal

Physical Review B 71・9(印刷中)

Physical Review B 71・9(印刷中) 2005

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Details

CRID

1010282256867515654
Article Type

journal article
Data Source
- KAKEN

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