Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas
Bibliographic Information
- Title
- Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas
- Author
- H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
Journal
-
- Physica Status Solidi C
-
Physica Status Solidi C 8(印刷中) 2011
- Tweet
Details
-
- CRID
- 1010282257417771024
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN