Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas
書誌事項
- タイトル
- Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas
- 著者
- H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
収録刊行物
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- Physica Status Solidi C
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Physica Status Solidi C 8(印刷中) 2011