Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions

Bibliographic Information

Title
Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions
Author
M. S. Kim, Y. K. Zhou, M. Funakoshi, S. Emura, S. Hasegawa and H. Asahi

Journal

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Details 詳細情報について

  • CRID
    1010282257423522051
  • Article Type
    journal article
  • Data Source
    • KAKEN

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