Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
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- 木本 恒暢
- 京都大学
書誌事項
- タイトル
- Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
- 著者
- Masato Noborio, Jun Suda, Tsunenobu Kimoto
収録刊行物
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- Applied Physics Express 1
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Applied Physics Express 1 101403-, 2008