Heterojunction diodes comprised of n-type Silicon and p-type ultrananoc rystalline diamond/hydrogenated amorphous carbon composite
書誌事項
- タイトル
- Heterojunction diodes comprised of n-type Silicon and p-type ultrananoc rystalline diamond/hydrogenated amorphous carbon composite
- 著者
- S.Ohmagari, S.Al-Riyami, T.Yoshitake
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 3510-, 2011
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詳細情報
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- CRID
- 1010282257464109331
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- 資料種別
- journal article
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- データソース種別
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- KAKEN