A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔV_<TH>=1/6ΔV_<ERASE> for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories
書誌事項
- タイトル
- A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔV_<TH>=1/6ΔV_<ERASE> for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 49 2010