High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

収録刊行物

• Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials

  Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials 2023-09-07

  The Japan Society of Applied Physics