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Atomic structure of the Se-passivated GaAs(001) surface revisited
Description
<jats:title>Abstract</jats:title><jats:p>We present a combined experimental and theoretical study of the Se-treated GaAs(001)-(<jats:inline-formula><jats:alternatives><jats:tex-math>$$2\times 1$$</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>2</mml:mn> <mml:mo>×</mml:mo> <mml:mn>1</mml:mn> </mml:mrow> </mml:math></jats:alternatives></jats:inline-formula>) surface. The (<jats:inline-formula><jats:alternatives><jats:tex-math>$$2\times 1$$</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>2</mml:mn> <mml:mo>×</mml:mo> <mml:mn>1</mml:mn> </mml:mrow> </mml:math></jats:alternatives></jats:inline-formula>) structure with the two-fold coordinated Se atom at the outermost layer and the three-fold coordinated Se atom at the third layer was found to be energetically stable and agrees well with the experimental data from scanning tunneling microscopy, low energy electron diffraction, and x-ray photoelectron spectroscopy. This atomic geometry accounts for the improved stability of the Se-treated surface against the oxidation. The present result allows us to address a long-standing question on the structure of the Se-passivated GaAs surface, and will leads us to a more complete understanding of the physical origin of the electrical and chemical passivation of Se-treated GaAs surface.</jats:p>
Journal
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- Scientific Reports
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Scientific Reports 13 (1), 2023-10-24
Springer Science and Business Media LLC
