Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
書誌事項
- タイトル
- Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
- 著者
- Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
収録刊行物
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- Proc. 2018 Silicon Nanoelectronics Workshop
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Proc. 2018 Silicon Nanoelectronics Workshop - 1-2, 2018
