Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
Bibliographic Information
- Title
- Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
- Author
- Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
Journal
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- Proc. 2018 Silicon Nanoelectronics Workshop
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Proc. 2018 Silicon Nanoelectronics Workshop - 1-2, 2018
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Details
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- CRID
- 1010848250431168774
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- Article Type
- journal article
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- Data Source
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- KAKEN