Ab initio molecular dynamics study of bonding nature of liquid semiconductors under ultrahigh pressure
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- Ohmura Satoshi
- Principal Investigator
- 広島工業大学
About This Project
- Japan Grant Number
- JP15K17722 (JGN)
- Funding Program
- Grants-in-Aid for Scientific Research
- Funding Organization
- Japan Society for the Promotion of Science
Kakenhi Information
- Project/Area Number
- 15K17722
- Research Category
- Grant-in-Aid for Young Scientists (B)
- Allocation Type
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- Multi-year Fund
- Review Section / Research Field
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- Science and Engineering > Mathematics and Physics > Physics > Mathematical physics/Fundamental condensed matter physics
- Research Institution
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- Hiroshima Institute of Technology
- Project Period (FY)
- 2015-04-01 〜 2017-03-31
- Project Status
- Completed
- Budget Amount*help
- 2,730,000 Yen (Direct Cost: 2,100,000 Yen Indirect Cost: 630,000 Yen)
Research Abstract
Using ab initio molecular dynamics simulations, microscopic properties of liquid metals and semiconductors under ultrahigh pressure conditions have been investigated. It is found that a novel structure appears in liquid sodium at pressures of more than 100 GPa. We also clarified that network structures consisting mainly of As4 units exist in liquid As at lower pressures and that the correlation between the As4 units is the origin of an intermediate-range order. When pressure increases, the network structure disappears and metallization occurs. In addition, the knowledge acquired from this study was used for investigation of transport properties of melts which are important for earth science.
Details 詳細情報について
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- CRID
- 1040000781862614016
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- Text Lang
- ja
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- Data Source
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- KAKEN


