Fabrication of novel excitonic devices using flux-controlled sputter epitaxy and study of exciton transport in the devices
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- Naho Itagaki
- Principal Investigator
- 九州大学
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- 白谷 正治
- Co-Investigator
- 九州大学
About this project
- Japan Grant Number
- JP18H01206
- Funding Program
- Grants-in-Aid for Scientific Research
- Funding organization
- Japan Society for the Promotion of Science
- Project/Area Number
- 18H01206
- Research Category
- Grant-in-Aid for Scientific Research (B)
- Allocation Type
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- Single-year Grants
- Review Section / Research Field
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- Basic Section 14030:Applied plasma science-related
- Research Institution
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- Kyushu University
- Project Period (FY)
- 2018-04-01 〜 2022-03-31
- Project Status
- Completed
- Budget Amount*help
- 17,550,000 Yen (Direct Cost: 13,500,000 Yen Indirect Cost: 4,050,000 Yen)
Research Abstract
The objective of this research is to fabricate novel excitonic devices using novel materials ZION, which have been developed by the principal investigator (PI), by means of flux-controlled sputter epitaxy. In this project, we succeeded in (1) epitaxial growth of single crystalline ZION films, (2) formation of atomically sharp hetero-interfaces between ZION and ZnO, and (3) demonstration of switching operation of exciton transistors by photo-irradiation to the gate electrodes. We also discussed the mechanism of exciton transport by an external electric field. Based on the hypothesis that the main transport mechanisms are bipolar diffusion and translational motion of dipoles in a non-uniform electric field, we solved the diffusion equation with the electric field parallel to the exciton transport direction as the external force and succeeded in qualitatively describing exciton transport in the devices.
Keywords
Details 詳細情報について
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- CRID
- 1040282256969241728
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- Text Lang
- ja
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- Data Source
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- KAKEN