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Development of crystallinity evaluation technique of poly-silicon film aiming at flat panel display on the basis of an alternating current surface photovoltage method
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- SHIMIZU Hirofumi
- Principal Investigator
- Nihon University
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- IKEDA Masanori
- Co-Investigator
- 日本大学
About This Project
- Japan Grant Number
- JP20560308 (JGN)
- Funding Program
- Grants-in-Aid for Scientific Research
- Funding Organization
- Japan Society for the Promotion of Science
Kakenhi Information
- Project/Area Number
- 20560308
- Research Category
- Grant-in-Aid for Scientific Research (C)
- Allocation Type
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- Single-year Grants
- Review Section / Research Field
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- Science and Engineering > Engineering > Electrical and electronic engineering > Electronic materials/Electric materials
- Research Institution
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- Nihon University
- Project Period (FY)
- 2008 〜 2010
- Project Status
- Completed
- Budget Amount*help
- 4,810,000 Yen (Direct Cost: 3,700,000 Yen Indirect Cost: 1,110,000 Yen)
Research Abstract
A novel instrument based on an alternating current surface photovoltage (AC SPV) was successfully developed to evaluate a crystallinity of Si poly-crystal thin film nondestructively. Simultaneously, irregular AC SPV characteristics were clarified for thermally oxidized Au-, Fe-, and Cr-contaminated n-type Si single crystal surfaces, respectively. The effects of these metal impurities on thermal oxide growth of Si surfaces were also investigated.
Details 詳細情報について
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- CRID
- 1040282257021934464
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- Text Lang
- ja
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- Data Source
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- KAKEN
