Development of Novel SiGeSn alloys Using High-Pressure Phase Transformation and Their Application to Environment-friendly Devices
About this project
- Japan Grant Number
- JP24K21691
- Funding Program
- Grants-in-Aid for Scientific Research
- Funding organization
- Japan Society for the Promotion of Science
- Project/Area Number
- 24K21691
- Research Category
- Grant-in-Aid for Challenging Research (Exploratory)
- Allocation Type
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- Multi-year Fund
- Review Section / Research Field
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- Medium-sized Section 26:Materials engineering and related fields
- Research Institution
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- Kyushu University
- Project Period (FY)
- 2024-06-28 〜 2027-03-31
- Project Status
- Granted
- Budget Amount*help
- 6,370,000 Yen (Direct Cost: 4,900,000 Yen Indirect Cost: 1,470,000 Yen)
Research Abstract
近年のIoTやウェアラブル端末等の発展に伴い、高効率発受光素子や室温付近での熱電素子の需要が高まっている。本研究では、室温での金属材料の合金化が可能なHigh-Pressure Torsion (HPT)法を用い、①高Sn濃度GeSn、SiSn混晶半導体、②中エントロピーSiGeSn、③SiGeSn混晶準安定相の形成に挑戦する。本研究で新奇SiGeSn混晶半導体を創製し、環境親和型素子開発を目指す。
Details 詳細情報について
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- CRID
- 1040300755870527232
-
- Text Lang
- ja
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- Data Source
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- KAKEN