Band-gap renormalization in highly excited GaN

Nagai, Takehiko, Inagaki, Takeshi J., Kanemitsu, Yoshihiko

doi:10.1063/1.1650552

Description

We have studied the band-gap renormalization in highly excited GaN thin films by means of photoluminescence (PL) spectral measurements from 6 to 300 K. The renormalized band-gap energy is determined from the low-energy edge of the broad PL band due to the high-density electron and hole (e–h) plasmas. The reduction of the band-gap energy depends on the density of e–h plasmas, but is independent of temperature. The renormalized band-gap energy is calculated using two theoretical models. Our results suggest that the e–h pair correlation plays an essential role in highly excited GaN.

Journal

Applied Physics Letters

Applied Physics Letters 84 (8), 1284-1286, 2004-02

American Institute of Physics

Details 詳細情報について

CRID: 1050001202298900096

NII Article ID: 120001682400

ISSN: 00036951; 10773118

DOI: 10.1063/1.1650552

HANDLE: 2433/87369

Web Site: https://pubs.aip.org/aip/apl/article-pdf/84/8/1284/18586547/1284_1_online.pdf

Text Lang: en

Article Type: journal article

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