Boron-doped p-BaSi 2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

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Abstract BaSi 2 films were fabricated on textured Si(0 0 1) substrates that consisted of {1 1 1} facets using molecular beam epitaxy. The light-trapping effect of these films and their performance when incorporated into solar cells were measured. X-ray diffraction and reflectivity measurements showed that the BaSi 2 films were grown epitaxially on the textured Si(0 0 1) substrate and confirmed the light-trapping effect. The critical thickness over which BaSi 2 relaxes increased from approximately 50 to 100 nm when comparing the BaSi 2 films on a flat Si(1 1 1) substrate and the textured substrate, respectively. p-BaSi 2 /n-Si solar cells were fabricated with varying BaSi 2 layer thickness and with hole concentrations in the range between 2.0 × 10 18 and 4.6 × 10 18  cm −3 . These cells exhibited a maximum energy conversion efficiency of 4.62% with an open-circuit voltage of 0.30 V and a short-circuit current density of 27.6 mA/cm 2 when the p-BaSi 2 layer was 75 nm-thick. These results indicated that the use of BaSi 2 films on textured Si(0 0 1) substrates in solar cells shows great promise.

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