Ultraviolet anti-Stokes photoluminescence in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:math>quantum-well structures
書誌事項
- タイトル別名
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- Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures
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Ultraviolet anti-Stokes photoluminescence (PL) is observed in InxGa1-xN/GaN multiple quantum wells. The observed anti-Stokes PL exhibits a quadratic dependence on the excitation energy density. Anti-Stokes PL excitation spectrum is proportional to the optical absorption spectrum of the InxGa1-xN quantum wells. Time-resolved PL measurement shows that a decay of the anti-Stokes PL is slower than that of the GaN PL under the excitation above the band gap of the GaN barrier, and it is half the time constant of the InxGa1-xN PL decay. A two-step two-photon absorption process is directly observed by means of two-color pump-and-probe experiment. It is considered that the anti-Stokes PL is caused by a two-step two-photon absorption process involving a localized state in the InxGa1-xN quantum wells as the intermediate state, and that the second absorption step is provided by photon recycling of the InxGa1-xN PL.
収録刊行物
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- Physical review B
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Physical review B 61 (19), 12654-12657, 2000-05
American Physical Society
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詳細情報 詳細情報について
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- CRID
- 1050001202645853952
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- NII論文ID
- 120007138944
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- NII書誌ID
- AA11187113
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- ISSN
- 24699969
- 10953795
- 10980121
- 01631829
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- HANDLE
- 2241/98279
- 10228/632
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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