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- Siタンケッショウ ノ テンイ カンサツ
- <Original Papers>Observation of Dislocation in Silicon Crystals
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Observation of dislocations which occur in silicon crystals grown by the pulling method was made with an infrared image tube and microscope. Although the dislocations present here are too complex for exact analysis, some interesting qualitative observations were obtained as follows. (a) Many of dislocation lines run in the general direction of the growth axis. (b) In the center of the crystals the density of dislocations is relatively low. (c) Propagation by growth of dislocations is initially present in seed. (d) Etch pits on external surface of Cu diffused crystals have special shapes as shown in photograph 9.
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収録刊行物
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- 東北大學選鑛製錬研究所彙報 = Bulletin of the Research Institute of Mineral Dressing and Metallurgy, Tohoku University
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東北大學選鑛製錬研究所彙報 = Bulletin of the Research Institute of Mineral Dressing and Metallurgy, Tohoku University 17 (1), 51-58, 1961-08-31
東北大學選鉱製錬研究所
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詳細情報 詳細情報について
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- CRID
- 1050001202758880768
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- NII論文ID
- 110000202218
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- NII書誌ID
- AN00168425
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- ISSN
- 0040876X
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- HANDLE
- 10097/32392
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- NDL書誌ID
- 9129121
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
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