Na蒸気を利用したNaフラックス法によるGaN単結晶の育成
Bibliographic Information
- Other Title
-
- Crystal Growth of GaN by the Na Flux Method Using Na Vapor
Search this article
Abstract
type:紀要類 (bulletin)
GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800℃ and 5MPa of N_2 for 8-200h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew spontaneously from the wall of a boron nitride crucible in the melt. The size of the prismatic GaN single crystals obtained at 800℃ was 1.0-3.0mm long and 0.3-1.0mm wide. Full-width at half maximum (FWHM) of the X-ray rocking curve measured for (10.0) reflection of prismatic crystals was 24 arcsec. Seeded growth of GaN single crystals was performed at 780℃ and N_2 pressure of 5MPa by the Na flux method with Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt with a low Na fraction, in which spontaneous nucleation of GaN was inhibited. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150μm in the directions perpendicular to the prismatic and pyramidal planes, implying the growth rate of 0.4μm/h at least.
報文
Original Paper
Journal
-
- 東北大学多元物質科学研究所素材工学研究彙報
-
東北大学多元物質科学研究所素材工学研究彙報 63 (1/2), 6-12, 2008-03-01
東北大学多元物質科学研究所素材工学研究棟
- Tweet
Keywords
Details
-
- CRID
- 1050001202773767680
-
- NII Book ID
- AA11795764
-
- ISSN
- 13484052
-
- Web Site
- http://hdl.handle.net/10097/40572
-
- Text Lang
- ja
-
- Article Type
- departmental bulletin paper
-
- Data Source
-
- IRDB