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Ohmic InP/Si direct-bonded heterointerfaces
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- Inoue, Ryoichi
- Department of Chemical Engineering, Kyoto University
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- Tanabe, Katsuaki
- Department of Chemical Engineering, Kyoto University
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Description
Directly bonded ohmic InP/Si heterostructures are realized, overcoming the large (8%) lattice mismatch. By employing proper semiconductor surface pretreatments including cleaning and oxide removal, we obtain ohmic interfacial electrical characteristics at a bonding temperature as low as 200 °C. Among the doping-polarity combinations, ohmic interfacial electrical characteristics are observed for n-InP/n-Si and n-InP/p-Si bonded heterointerfaces, but not for p-InP/p-Si and p-InP/n-Si pairs. We numerically explain this polarity dependence in terms of energy band connections across the InP/Si heterointerfaces. The highly conductive III–V/Si direct bonding technique developed in this study is applicable for various heterostructured optoelectronic devices, such as multijunction solar cells and photonic integrated circuits.
Journal
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- Applied Physics Letters
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Applied Physics Letters 114 2019-05-13
American Institute of Physics Inc.
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Details 詳細情報について
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- CRID
- 1050001202930130944
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- NII Article ID
- 120006634660
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- ISSN
- 00036951
- 10773118
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- HANDLE
- 2433/241675
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE