プラズマ窒化AlNx障壁層を持つNbNトンネル接合の電気的特性改善

IR HANDLE Web Site 6 References Open Access

Bibliographic Information

Other Title
  • プラズマ窒化AlNx障壁層を特つNbNトンネル接合の電気的特性改善
  • プラズマ チッカ AlNx ショウヘキソウ オ モツ NbN トンネル セツゴウ ノ デンキテキ トクセイ カイゼン
  • Improvement in Electrical Characteristics of NbN tunnel Junctions With Plasma-Nitrided AlNx Barriers

Search this article

Abstract

We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical characteristics of the junctions. The application of the junctions to high frequency electromagnetic wave detectors requires increase in the critical current density J_c and the gap voltage V_g of the junctions. In this work, we examined the conditions of depositing a counter NbN layer and forming an AlNx barrier for the purpose of improving the characteristics of the junctions. As a result, the V_g was increased by 0.4 mV to 5.0 mV by adjusting the deposition conditions and by raising the substrate temperature during deposition of the counter NbN layer. On the other hand, the J_c up to 10.2 kA/cm^2 was obtained by changing the RF power density for nitriding an Al layer.

IEICE Technical Report;SCE2011-15

Journal

References(6)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top