Adsorption and desorption of deuterium on partially oxidized Si(100) surfaces

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Abstract

Adsorption and desorption of deuterium are studied on the partially oxidized Si(100) surfaces. The partial oxygen coverage causes a decrease in the initial adsorption probability of D atoms. The observed D2 temperature-programmed-desorption (TPD) spectra comprise of multiple components depending on the oxygen coverage (θO). For θO=0.1ML the D2 TPD spectrum is deconvoluted into four components, each of which has a peak in the temperature region higher than the D2 TPD peaking at 780 K on the oxygen free surface. The highest TPD component with a peak around 1040 K is attributed to D adatoms on Si dimers backbonded by an oxygen atom. The other components are attributed to D adatoms on the nearest or second nearest sites of the O-backbonded Si dimers. D adatoms on the partially oxidized Si surfaces are abstracted by gaseous H atoms along two different abstraction pathways: one is the pathway along direct abstraction (ABS) to form HD molecules and the other is the pathway along indirect abstraction via collision-induced-desorption (CID) of D adatoms to form D2 molecules. The ABS pathway is less seriously affected by oxygen adatoms. On the other hand, the CID pathway receives a strong influence of oxygen adatoms since the range of surface temperature effective for CID is found to considerably shift to higher surface temperatures with increasing θO. Gradual substitution of D adatoms with H atoms during H exposure results in HD desorption along the CID pathway in addition to the ABS one. By employing a modulated beam technique the CID-related HD desorption is directly distinguished from the ABS-related one.

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