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抄録
Based on ab initio total energy calculation, we show that a dynamic ad-dimer twisting assisted (DATA) process plays a crucial role in facilitating a novel structural reconstruction involving surface and subsurface atoms on Si(001). It leads to self-assembly of long nanowires of group-V elements (Bi, Sb) in the trenches of surface dimer vacancy lines (DVLs) with a characteristic double-dimer configuration. The key to this is the lowering of the kinetic barrier by the DATA process in conjunction with a favorable interaction between ad-dimers and step edges in DVLs. The present results provide an excellent account for experimental observations and reveal the atomistic origin and the dynamic transformation path for nanowire self-assembly on Si(001).
収録刊行物
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- Physical Review Letters
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Physical Review Letters 94 (22), 226103-1-226103-4, 2005-06-10
American Physical Society
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詳細情報 詳細情報について
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- CRID
- 1050001338909729280
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- NII書誌ID
- AA00773679
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- ISSN
- 10797114
- 00319007
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- HANDLE
- 10228/644
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB