Enhanced figure of merit of a porous thin film of bismuth antimony telluride

DOI 機関リポジトリ 機関リポジトリ (HANDLE) PDF 被引用文献30件

この論文をさがす

説明

A porous thin film of Bi0.4Te3Sb1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi0.4Te3Sb1.6 films to 0.25 W/(m?K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 μV/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film.

収録刊行物

  • Applied Physics Letters

    Applied Physics Letters 98 (2), 023114-1-023114-3, 2011-01-17

    American Institute of Physics

被引用文献 (30)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ