Fabrication and characterization of field-effect transistor device with C<sub>2v</sub> isomer of Pr@C<sub>82</sub>

DOI IR IR Web Site Web Site 4 Citations Open Access

Bibliographic Information

Other Title
  • Fabrication and characterization of field-effect transistor device with C_<2v> isomer of Pr@C_<82>

Search this article

Description

<p>A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.</p>

Journal

Citations (4)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top