引っかき傷づけしたシリコン単結晶板の腐食法による研究〔英文〕

機関リポジトリ Web Site

書誌事項

タイトル別名
  • Etching Examination for the Scratched Wafer of Silicon Single Crystal
  • ヒッカキキズズケシタ シリコン タンケッショウバン ノ フショクホウ ニヨル
  • 引っかき傷づけしたシリコン単結晶板の腐食法による研究

この論文をさがす

抄録

type:text

Etching examination is made for the scratched wafer of silicon single crystal with Dash etchant. With the scratch without microcrack (load of 100 g), rapid eching is observed in the surface layer of the scratch, of the order of 0.3 μm in thickness, and this suggests that some defects are induced in the layer. With the scratches accompanied with microcracks (200 g and 300 g loads), the remarkable distortion in the surrounding of the scratch is re-moved by light etching and especially deep etching is observed in the microcrack. This give a evidence for the poor heading of the microcrack. Etch pits are observed in the etched furrow in front of the microcrack but it is difficult to relate the pit with dislocation. The elastic character of the distortion is due to the poor healing of microcracks.

source:Bulletin of the Faculty of Education, Chiba University. Part II

収録刊行物

詳細情報 詳細情報について

問題の指摘

ページトップへ