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Adsorption of Methylchloride Molecule on GaAs(001)-2x4 Surface
Bibliographic Information
- Other Title
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- GaAs (001) 表面における塩化メチル分子の吸着過程
- GaAs 001 ヒョウメン ニ オケル エンカ メチル ブンシ ノ キュウチャク カテイ
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Description
Abstract Adsorption process of methylchloride (CH3Cl) on GaAs(OO1) surface was studied by a scanning tunneling microscopy (STM) measurement. The arsenic rich 2x4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed by CH3Cl at room temperature. A Iarge amount of adsorbates were observed in the STM image. It was suggested that CH3Cl molecule was preferentially adsorbed on B step on GaAs(OO1)-2x4 surface. The adsorption of CH3Cl molecule was also studied by ACF Hatree-Fock calculation, which well explained the CH3Cl adsorption model.
Journal
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- Memoirs of Faculty of Engineering, University of Miyazaki
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Memoirs of Faculty of Engineering, University of Miyazaki 35 53-58, 2006-08-30
宮崎大学工学部
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Details 詳細情報について
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- CRID
- 1050007314766190336
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- NII Article ID
- 110005001882
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- NII Book ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/413
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- NDL BIB ID
- 8567842
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- Text Lang
- ja
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- Article Type
- departmental bulletin paper
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- Data Source
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- IRDB
- NDL Search
- CiNii Articles