キサントゲン酸金属塩を用いた非真空プロセスによるCuInS_2薄膜の作製

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  • Non-vacuum Process of CuInS_2 Thin Films From Metal Xanthate Precursors

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Cu–III–VI_2 compounds have attracted considerable interest because of their possible photovoltaic applications. The ternary semiconductor copper indium sulfide (CuInS_2) is one of the promising materials for thin film solar cells because its bandgap energy of 1.5 eV and the absorption coefficient of 10^5 cm^<-1>. CuInS_2 thin film on glass substrate is grown by dipping-coat from Cu- and In-xanthate solution as precursor materials. X-ray diffraction pattern indicated that peaks of CuInS_2 (112) are observed at 150℃. This temperature is lowest in non-vacuum process of CuInS_2 film. The all CuInS_2 films are p-type conductivity by thermo prove analysis because Cu atom in In site defects are dominant in the samples from EPMA results.

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