A Study of the Recombination Process at the p-n Junction Interface by the Photoexcited-Carrier-Concentration Controlled Piezoelectric Photothermal Method
Bibliographic Information
- Other Title
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- 光励起キャリア数を制御した圧電素子光熱変換分光法による半導体p-n接合界面の研究
- ヒカリ レイキ キャリアスウ オ セイギョ シタ アツデン ソシ コウネツ ヘンカン ブンコウホウ ニ ヨル ハンドウタイ p n セツゴウ カイメン ノ ケンキュウ
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Abstract
It is important to control the carrier dynamics at p-n junction interface for high efficiency solar cells. In this study, the signal generation mechanisms of the Surface Photo-Voltage (SPV) and Piezoelectric Photo-Thermal (PPT) signals of Si p-n junction have investigated by using the photoexcited-carrier-concentration controlled incident light. Since the carrier accumulation (= SPV) and the recombination phenomenon (= PPT) are complementary, SPV and PPT should shows a peak and a dip, respectively. However, at hv = 1.30 eV, both SPV and PPT showed peaks. This was concluded that the PPT increased by a thermodynamic energy loss with phonon emitting within the conduction and valence bands.
Journal
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- Memoirs of Faculty of Engineering, University of Miyazaki
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Memoirs of Faculty of Engineering, University of Miyazaki 39 15-18, 2010-09-30
宮崎大学工学部
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Details 詳細情報について
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- CRID
- 1050007314771909760
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- NII Article ID
- 110008658989
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- NII Book ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/3187
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- NDL BIB ID
- 10837811
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- Text Lang
- ja
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- Article Type
- departmental bulletin paper
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- Data Source
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- IRDB
- NDL
- CiNii Articles