密度汎関数理論計算によるBa8Cu6Ge40クラスレートの電子構造と輸送特性

機関リポジトリ Web Site オープンアクセス

書誌事項

タイトル別名
  • Electronic Structure and Transport Properties of Ba8Cu6Ge40 Clathrate Calculated by Density Functional Theory
  • ミツド ハンカンスウ リロン ケイサン ニ ヨル Ba ₈ Cu ₆ Ge ₄ ₀ クラスレート ノ デンシ コウゾウ ト ユソウ トクセイ

この論文をさがす

抄録

Semiconducting clathrates are attracting a great deal of attention as potential candidates of thermoelectric material based on a design concept called Phonon Glass and Electron Crystal (PGEC). Since most of the thermoelectric clathrates are n-type, developing a p-type clathrate with high thermoelectric performance is an important issue. In this study, the electronic structure and thermoelectric properties of Ba8Cu6Ge40 clathrate are calculated based on density functional theory (DFT) to search for new p-type clathrates. An energy gap is formed in the electronic band structure of Ba8Cu6Ge40, and the Fermi energy lies in the valence band, indicating that Ba8Cu6Geぃis a p-type semiconductor. The effective mass of the valence band is larger than that of the conduction band. The Seebeck coefficient for p-type is larger than that for n-type, reflecting the difference in effective mass. According to the dependence of Seebeck coefficient and electrical conductivity on the chemical potential, adjusting the Fermi energy, corresponding to the carrier concentration, to the optimum value improves the power factor. Therefore, the results of DFT calculation show that Ba8Cu6Ge40 has excellent properties as a candidate for p-type thermoelectric materials.

収録刊行物

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ