Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

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We investigate the effect of temperature and pre-annealing on the potential-induced degradation (PID) of silicon heterojunction (SHJ) photovoltaic (PV) modules. SHJ PV modules show a faster decrease in short-circuit current density (Jsc) at higher temperatures during PID tests. We also observe a complex relationship between the degree of the Jsc decrease and temperature during the PID tests. Pre-annealing before the PID tests at sufficiently high temperatures leads to the complete suppression of the PID of SHJ PV modules. The decrease in Jsc is known to be due to the chemical reduction of indium (In) in transparent conductive oxide (TCO) films in SHJ cells, in which water (H_2O) in SHJ modules is involved. These indicate that H_2O may out-diffuse from the SHJ PV modules during a PID test or pre-annealing at sufficiently high temperatures, by which the chemical reduction of indium in TCO into metallic In is suppressed.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/18178

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詳細情報 詳細情報について

  • CRID
    1050013706703128576
  • ISSN
    00214922
  • Web Site
    http://hdl.handle.net/10119/18178
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB

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