Investigation for one-chip high functionality gate driver IC

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  • ゲートドライバーICの1チップ化・高機能化に向けての検討

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Abstract

GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal is to realize 3D power-SoC, which stacks driver circuit and control circuit for GaN power devices, and passive devices on one chip. One of the key issues to realize 3D power SoC is to develop fully integrated driver IC for GaN power devices without using discrete devices such as Schottky barrier diode. In this paper, we report the fully integrated gate driver IC with higher functionality.

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