Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system

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Abstract

As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devices is becoming crucial. The junction temperature is a vital indicator of the reliability and health of the power semiconductor devices. Therefore, we developed a novel junction temperature measurement method via dynamic threshold voltage. The proposed method uses a specially designed PCB sensor for detecting a drain current and captures the dynamic gate-source voltage at predetermined drain current levels. The analog circuit was designed and experimentally verified by a double pulse test. A 16-bit ADC embedded in the microcontroller is utilized to digitize the captured voltage to demonstrate the monitoring system. The temperature sensitivity of the Power MOSFET was -2.2 mV/°C and was unaffected by the high side device temperature.

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