Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system
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As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devices is becoming crucial. The junction temperature is a vital indicator of the reliability and health of the power semiconductor devices. Therefore, we developed a novel junction temperature measurement method via dynamic threshold voltage. The proposed method uses a specially designed PCB sensor for detecting a drain current and captures the dynamic gate-source voltage at predetermined drain current levels. The analog circuit was designed and experimentally verified by a double pulse test. A 16-bit ADC embedded in the microcontroller is utilized to digitize the captured voltage to demonstrate the monitoring system. The temperature sensitivity of the Power MOSFET was -2.2 mV/°C and was unaffected by the high side device temperature.
収録刊行物
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- 電子情報通信学会技術研究報告. EE, 電子通信エネルギー技術
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電子情報通信学会技術研究報告. EE, 電子通信エネルギー技術 122 (343), 111-116, 2023-01-12
電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1050014183344239360
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- NII書誌ID
- AA11135980
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- ISSN
- 24326380
- 09135685
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- HANDLE
- 10228/00009144
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB