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Abstract
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A previous model that prolonged illumination creates two types of dangling bonds, i.e., normal dangling bonds and hydrogen-related dangling bonds (dangling bonds having hydrogen at a nearby site) is modified by taking into account recent observations in a-Si:H, particularly on diffusion of hydrogen dissociated from a Si-H bond by nonradiative recombination at hydrogenrelated dangling bonds and intradistance within a close pair of two types of dangling bonds.
Journal
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- 広島工業大学研究紀要
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広島工業大学研究紀要 33 19-24, 1999-02-01
広島工業大学
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Details 詳細情報について
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- CRID
- 1050014282715024128
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- NII Article ID
- 40003284393
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- NII Book ID
- AN0021271X
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- ISSN
- 03851672
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- NDL BIB ID
- 4645991
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- Text Lang
- en
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- Article Type
- departmental bulletin paper
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- Data Source
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- IRDB
- NDL
- CiNii Articles