Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation

Web Site Open Access

Bibliographic Information

Other Title
  • 次世代素子、Si 共鳴トンネルMOS トランジスタの提案及び理論検討
  • ジセダイ ソシ Si キョウメイ トンネル MOS トランジスタ ノ テイアン オヨビ リロン ケントウ

Description

The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which was proposed to realize a low-power and high-speed characteristics, were reviewed. From the discussion related to the suppression of the DT from the source to the drain under the gate-off condition, the excellent switching operation, the optimum off-set energy between the dielectric films at the both channel edges and Si and the feasibility of the three-valued logic circuit, it is shown that the SRTMOST would become the potential candidate of the substitution for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the next generation.

Journal

Keywords

Details 詳細情報について

Report a problem

Back to top