Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators
説明
A flexible C_<60> field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ~10^<-2> cm^2 V^<-1> s^<-1> at 300 K. Furthermore, the C_<60> FET has been fabricated with a high-dielectric Ba_<0.4>Sr_<0.6>Ti_<0.96>O_3(BST) gate insulator, showing n-channel properties; the μ value is estimated to be ~10^<-4> cm^2 V^<-1> s^<-1> at 300 K. The FET device operates at very low gate voltage, V_G, and low drain-source voltage, V_<DS>. Thus these C_<60> FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
identifier:00036951
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/3374
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 87 (14), 143506-1-143506-3, 2005-10
AMERICAN INSTITUTE OF PHYSICS
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詳細情報 詳細情報について
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- CRID
- 1050282812513697664
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- NII論文ID
- 120000861152
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- http://hdl.handle.net/10119/3374
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- 本文言語コード
- en
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- journal article
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