Technical trends of basic researches on microwave high power semiconductor devices and circuits

Bibliographic Information

Other Title
  • マイクロ波高出力半導体デバイス,回路を支える基礎基盤技術の動向
  • マイクロ ハコウ シュツリョク ハンドウタイ デバイス カイロ オ ササエル キソ キバン ギジュツ ノ ドウコウ

Search this article

Description

The 3rd generation mobile communication system (IMT-2000) has started in 2001. It includes W-CDMA and CDMA2000 with higher transmission bit rate and higher frequency than the 1st generation analog cellular systems (AMPS, etc.) and 2nd generation digital cellular systems (GSM, PDC, CDMA One, etc.). Several remarkable advances have been made in equipment performance including quality, size, power consumption, cost, etc. Especially efficiency and distortion performance of high power devices and amplifiers used in the base stations have been greatly improved. Now the R&D target has shifted to the 4th generation mobile communication system or wireless LANs with even higher transmission bit rate as well as higher operational frequency than those of the existing mobile communication systems. Therefore efficiency and distortion performance of high power devices and amplifiers have to be much improved for the future communication systems. Under this background, the fundamental perspective of future high power devices and amplifiers is described in this paper from the following viewpoints: (a) high power devices and device modeling techniques, (b) device, circuit, and system simulation software, (c) measurement techniques, and (d) circuit design techniques for high efficiency and low distortion performance. Related to (a) high power devices and device modeling techniques, the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices are introduced. Then in (b), the commercially available device, circuit and system simulators for wireless communications are presented. As related to (c), the recent active loadpull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. Pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. In (d), the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented. Most of the theory and techniques in this paper have an origin in 1950 s to 1970 s, but these theory and techniques are being reborn again as a new technology suitable for the next generation wireless communication systems.

Journal

Details 詳細情報について

Report a problem

Back to top