過渡熱発光法によるZnS/GaAs気相エピタキシャル層のトラップ準位の測定

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  • Transient thermoluminescence studies of trap levels of ZnS layers grown on GaAs substrates by vapor-phase epitaxy

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The trap levels of epitaxial ZnS crystals grown (100) n-Gaas substrates have been studied by transient thermoluminescence method, where the temperature dependence of the photoluminescence decay is analyzed. The samples prepared at a high substrate temperature (~700C), shwing the self-activated emission, have a trap level with an ionization energy of 0.41eV and an electron capture cross-section of 4.2*10^-14 cm^2. The origin of this trap is considered to be ga impurities, contamination from GaAs Substrate. On the other hand, the samples prepared at alow substrate temperature (~600C), exhibiting green- and blue- Cu related emissions, have atrap level with an ionization energy of 0.5eV and a capture cross-section of 1.0*10^-14 cm^2, and two other traps of 0.28 and 0.64eV. However, in this case correspondence to specific impurities is as yet unclear.

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