Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits

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Ambipolar organic field effect transistors (OFETs), consisting of a composite of polyhexylthiophene (PHT) and [6,6]-phenyl C61-butylic acid methyl ester (PCBM), was converted into a p- or n-type OFET by insertion of a thin tetracyanoquinodimethane (TCNQ) or tetrathiafluvalene (TTF) buffer layer. The interface in the Au/TCNQ/PHT:PCBM composite transports hole but blocks electron, while the transported carrier was switched to electron with insertion of a TTF layer. The selective transport is probably due to vacuum level matching or temporal doping. High impedance in a complementary metal-oxide-semiconductor inverter was demonstrated with unipolarized ambipolar FETs, resulting in a decrease in the through current.

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  • Applied Physics Letters

    Applied Physics Letters 91 (07), 071905-1-071905-3, 2007-08-13

    American Institute of Physics

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