Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice

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We report on the dynamics of photoexcited carriers using picosecond luminescence measurements of GaAs/AlAs superlattices with a barrier width of 1.2 nm and a well width of 3.4 nm. The observed decay kinetics allow us to observe the tunneling-assisted radiative recombination of electrons and holes in different wells. Furthermore, introducing an enlarged well in the superlattice, we investigate the dynamics of photoexcited carriers sinking into the deeper well via vertical transport.

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  • Physical review B. Condensed matter

    Physical review B. Condensed matter 34 (12), 9019-9022, 1986-12-15

    Published for the American Physical Society by the American Institute of Physics

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